1. product profile 1.1 general description p-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? logic-level compatible ? trench mosfet technology ? very fast switching 1.3 applications ? high-side loadswitch ? high-speed line driver ? relay driver ? switching circuits 1.4 quick reference data [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . PMV48XP 20 v, 3.5 a p-channel trench mosfet rev. 1 ? 21 december 2010 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t amb =25c ---20v v gs gate-source voltage -12 - 12 v i d drain current v gs =-4.5v; t amb =25c [1] ---3.5a static characteristics r dson drain-source on-state resistance v gs =-4.5v; i d =-2.4a; pulsed; t p 300 s; ? 0.01; t j =25c - 4855m ? product specification sales@twtysemi.com 1 of 4 http://www.twtysemi.com
PMV48XP 20 v, 3.5 a p-channel trench mosfet 2. pinning information 3. ordering information 4. marking [1] % = placeholder for manufacturing site code table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot23 (to-236ab) 2ssource 3 d drain 12 3 017aaa094 s d g table 3. ordering information type number package name description version PMV48XP to-236ab plastic surface-mounted package; 3 leads sot23 table 4. marking codes type number marking code [1] PMV48XP kn% product specification sales@twtysemi.com 2 of 4 http://www.twtysemi.com
PMV48XP 20 v, 3.5 a p-channel trench mosfet 5. limiting values [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t amb =25c - -20 v v gs gate-source voltage -12 12 v i d drain current v gs =-4.5v; t amb =25c [1] --3.5a v gs =-4.5v; t amb =100c [1] --2.2a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - -14 a p tot total power dissipation t amb =25c [2] - 510 mw [1] - 930 mw t sp = 25 c - 4150 mw t j junction temperature - 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb =25c [1] --1a 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided c opper, tin-plated, mounting pad for drain 6 cm 2 . table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] - 213 245 k/w [2] - 117 135 k/w r th(j-sp) thermal resistance from junction to solder point - 2530k/w product specification sales@twtysemi.com 3 of 4 http://www.twtysemi.com
PMV48XP 20 v, 3.5 a p-channel trench mosfet 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =-250a; v gs =0v; t j =25c -20--v v gsth gate-source threshold voltage i d =-250a; v ds =v gs ; t j = 25 c -0.75 -1 -1.25 v i dss drain leakage current v ds =-20v; v gs =0v; t amb =25c ---1a i gss gate leakage current v gs =-12v; v ds =0v; t j = 25 c - - -100 na r dson drain-source on-state resistance v gs =-4.5v; i d = -2.4 a; pulsed; t p 300 s; ? 0.01 ; t j =25c - 4855m ? v gs =-4.5v; i d = -2.4 a; pulsed; t p 300 s; ? 0.01 ; t j = 150 c - 7080m ? v gs =-2.5v; i d = -2 a; pulsed; t p 300 s; ? 0.01 ; t j =25c - 7181m ? g fs forward transconductance v ds =-12v; i d = -2 a; pulsed; t p 300 s; ? 0.01 ; t j =25c -12-s dynamic characteristics q g(tot) total gate charge i d =-1a; v ds =-10v; v gs =-4.5v; t j =25c -8.511nc q gs gate-source charge - 1.8 - nc q gd gate-drain charge - 1.8 - nc c iss input capacitance v gs =0v; v ds = -10 v; f = 1 mhz; t j =25c - 1000 - pf c oss output capacitance - 130 - pf c rss reverse transfer capacitance -90-pf t d(on) turn-on delay time v ds =-10v; v gs =-4.5v; r g(ext) =6 ? ; t j =25c; i d =-1a -11-ns t r rise time - 13 - ns t d(off) turn-off delay time - 61 - ns t f fall time - 23 - ns source-drain diode v sd source-drain voltage i s =-2.4a; v gs =0v; t j =25c; t p 300 s; ? 0.01 - -0.82 -1.2 v product specification sales@twtysemi.com 4 of 4 http://www.twtysemi.com
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